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Open Access Nano Express

Magnetoresistance in Sn-Doped In2O3Nanowires

Olívia M Berengue1*, AlexandreJC Lanfredi2, Livia P Pozzi1, JoséFQ Rey2, Edson R Leite3 and Adenilson J Chiquito1

Author Affiliations

1 Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil

2 Centro de Engenharia, Modelagem e Ciências Sociais Aplicadas, Universidade Federal do ABC, CEP 09210-170, Santo André, São Paulo, Brazil

3 Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil

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Nanoscale Research Letters 2009, 4:921-925  doi:10.1007/s11671-009-9336-4

Published: 4 July 2009

Abstract

In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.

Keywords:
Oxide nanowires; Weak localization; Electron transport; Electron–electron scattering