Table 2 |
||||||
| Magnetic properties of the different samples measured at 4 K and 300 K | ||||||
| C1 | C2 | M1 | ||||
| T(K) | 4.2 | 300 | 4.2 | 300 | 4.2 | 300 |
| Hc(Oe) | 123 | 77 | 109 | 75 | 269 | 121 |
| Mr/Ms | 0.22 | 0.11 | 0.15 | 0.15 | 0.27 | 0.11 |
| Ms(μB/Mn) | 1.6 | 1.15 | 1.3 | 0.8 | 2.2 | 0.7 |
Hcis the mean coercive field,Mris the remance field, andMsis the saturation magnetic moment.Mstands for magnetization.MrandMshave been normalized to the total amount of implanted Mn atoms. Note the number of implanted atoms in M1 is different from the other cases
Sanz et al. Nanoscale Research Letters 2009 4:878 doi:10.1186/1556-276X-4-878
