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Surface Localization of Buried III–V Semiconductor Nanostructures

P Alonso-González*, L González, D Fuster, J Martín-Sánchez and Yolanda González

Author affiliations

Instituto de Microelectrónica de Madrid (IMM-CNM, CSIC), Isaac Newton, 8 Tres Cantos, Madrid, 28760, Spain

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Citation and License

Nanoscale Research Letters 2009, 4:873-877  doi:10.1007/s11671-009-9329-3

Published: 9 May 2009


In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the cap layer thickness explored (from 25 to 100 nm). The correspondence between these mounds and the buried nanostructures is confirmed by posterior selective strain-driven formation of new nanostructures on top of them, when the distance between the buried and the superficial nanostructures is short enough (d = 25 nm).

Droplet epitaxy; III–V Semiconductor nanostructures; MBE