Figure 1.

SEM image of GaAs/InAs nanowire heterostructures, where the substrate normal is tilted 10° away from the incident electron beam direction. Inset shows a TEM image of the top portion of a typical GaAs/InAs nanowire

Paladugu et al. Nanoscale Research Letters 2009 4:846-849   doi:10.1007/s11671-009-9326-6