Figure 1.
SEM image of GaAs/InAs nanowire heterostructures, where the substrate normal is tilted
10° away from the incident electron beam direction. Inset shows a TEM image of the
top portion of a typical GaAs/InAs nanowire
Paladugu et al. Nanoscale Research Letters 2009 4:846 doi:10.1007/s11671-009-9326-6 |
