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Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores

M Paladugu1, J Zou12*, YN Guo1, X Zhang1, HJ Joyce3, Q Gao3, HH Tan3, C Jagadish3* and Y Kim4

Author affiliations

1 School of Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia

2 Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD, 4072, Australia

3 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 0200, Australia

4 Department of Physics, Dong-A University, Hadan-2-dong, Sahagu, Busan, 604-714, Korea

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Citation and License

Nanoscale Research Letters 2009, 4:846-849  doi:10.1007/s11671-009-9326-6

Published: 6 May 2009


GaAs was radially deposited on InAs nanowires by metal–organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

Nanowire heterostructures; GaAs/InAs; Crystal structure