Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
1 School of Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia
2 Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD, 4072, Australia
3 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 0200, Australia
4 Department of Physics, Dong-A University, Hadan-2-dong, Sahagu, Busan, 604-714, Korea
Nanoscale Research Letters 2009, 4:846-849 doi:10.1007/s11671-009-9326-6Published: 6 May 2009
GaAs was radially deposited on InAs nanowires by metal–organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.