Figure 4.

aLow-magnification TEM images of the SiC nanorods annealed at 1,250 °C for 5 min.bandcSAED patterns recorded from the corresponding areas of SiC nanorod marked ina, respectively.dandeHigh-magnification TEM lattice image taken from the corresponding areas of the SiC nanorods marked ina, respectively.fandgEDS spectra collected from the corresponding areas marked with circles ina, respectively

Zhou et al. Nanoscale Research Letters 2009 4:814-819   doi:10.1007/s11671-009-9320-z