Synthesis of Novel Double-Layer Nanostructures of SiC–WO x by a Two Step Thermal Evaporation Process
1 Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, 790-784, South Korea
2 Center for Information Materials, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, 790-784, South Korea
Nanoscale Research Letters 2009, 4:802-808 doi:10.1007/s11671-009-9318-6Published: 19 April 2009
A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W18O49nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W18O49nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters.