Figure 8.

aIdsVdscharacteristics of Zn3P2nanowire MIS-FET under gate bias ranging from −1 V to 7 V with a step of 0.5 V. The inset is a schematic illustration of the device.bIdsVdscharacteristics of single zigzag Zn3P2nanowire-based MIS-FET, showingp-type behavior.IVcurves ofcZn3P2anddCd3P2nanobelts measured at 300–100 K. The insets show the conductance in a logarithmic scale at zero bias voltage plotted as a function of 1000/T

Shen and Chen Nanoscale Research Letters 2009 4:779-788   doi:10.1007/s11671-009-9338-2