Figure 8.

aI_ds–V_dscharacteristics of Zn₃P₂nanowire MIS-FET under gate bias ranging from −1 V to 7 V with a step of 0.5 V. The inset is a schematic illustration of the device.bI_ds–V_dscharacteristics of single zigzag Zn₃P₂nanowire-based MIS-FET, showingp-type behavior.I–Vcurves ofcZn₃P₂anddCd₃P₂nanobelts measured at 300–100 K. The insets show the conductance in a logarithmic scale at zero bias voltage plotted as a function of 1000/T