Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires
1 The Graduate Institute of Electrical and Communications Engineering, Feng Chia University, 100, Wen-Hwa Rd, Seatwen, Taichung, 40724, Taiwan
2 Department of Electronic Engineering, Feng Chia University, Taichung, 40724, Taiwan
Nanoscale Research Letters 2009, 4:694-698 doi:10.1007/s11671-009-9299-5Published: 5 April 2009
The ordered tin disulfide (SnS2) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS2nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS2nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS2nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).