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Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

Lu Wang, Meicheng Li*, Min Xiong and Liancheng Zhao

Author Affiliations

Department of Materials Physics and Chemistry, Harbin Institute of Technology, Harbin, People’s Republic of China

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Nanoscale Research Letters 2009, 4:689-693  doi:10.1007/s11671-009-9304-z

Published: 5 April 2009


The morphology and transition thickness (tc) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. Andtcdecreased when the thin InGaAs was used as a buffer layer instead of the GaAs layer on (311) B substrates. For InAs/(In)GaAs QDs grown on high miller index surfaces, both the morphology andtccan be influenced by the interfacial bonds configuration. This indicates that buffer layer design with appropriate interfacial bonds provides an approach to adjust the morphologies of QDs grown on high miller surfaces.

InAs; Transition thickness; High miller index; Strain; Interfacial bonds