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Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application

KartikaChandra Sahoo1, Men-Ku Lin2, Edward-Yi Chang1*, Yi-Yao Lu1, Chun-Chi Chen1, Jin-Hua Huang2 and Chun-Wei Chang3

Author Affiliations

1 Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan

2 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

3 Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, Taiwan

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Nanoscale Research Letters 2009, 4:680-683  doi:10.1007/s11671-009-9297-7

Published: 22 April 2009


We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160–200 nm and a height of 140–150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen.

Sub-wavelength Structure; Solar cell; SWS fabrication; Reflectance; Anti-reflective coatings