Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application
1 Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
2 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
3 Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, Taiwan
Nanoscale Research Letters 2009, 4:680-683 doi:10.1007/s11671-009-9297-7Published: 22 April 2009
We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160–200 nm and a height of 140–150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen.