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Synthesis and Characterization of Glomerate GaN Nanowires

Lixia Qin1, Chengshan Xue2, Yifeng Duan1* and Liwei Shi1

Author Affiliations

1 Department of Physics, School of Sciences, China University of Mining and Technology, 221008, Xuzhou, People’s Republic of China

2 Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People’s Republic of China

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Nanoscale Research Letters 2009, 4:584-587  doi:10.1007/s11671-009-9285-y

Published: 17 March 2009


Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga2O3/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy and Fourier transformed infrared spectra were used to characterize the morphology, crystallinity and microstructure of the as-synthesized samples. Our results show that the samples are of hexagonal wurtzite structure. For the majority of GaN nanowires, the length is up to tens of microns and the diameter is in the range of 50–200 nm. The growth process of the GaN nanowires is dominated by Co–Ga–N alloy mechanism.

Nanowires; Magnetron sputtering; Alloy mechanism