SpringerOpen Newsletter

Receive periodic news and updates relating to SpringerOpen.

Open Access Nano Express

Femtosecond Carrier Dynamics in In2O3Nanocrystals

Andreas Othonos1*, Matthew Zervos2 and Demetra Tsokkou1

Author Affiliations

1 Department of Physics, Research Centre of Ultrafast Science, University of Cyprus, P.O. Box 20537, Nicosia, 1678, Cyprus

2 Department of Mechanical and Manufacturing Engineering, Materials Science Group, Nanostructured Materials and Devices Laboratory, University of Cyprus, P.O. Box 20537, Nicosia, 1678, Cyprus

For all author emails, please log on.

Nanoscale Research Letters 2009, 4:526-531  doi:10.1007/s11671-009-9275-0

Published: 27 February 2009

Abstract

We have studied carrier dynamics in In2O3nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photo-generated carriers in In2O3nanocrystals. Intensity measurements reveal that Auger recombination plays a crucial role in the carrier dynamics for the carrier densities investigated in this study. A simple differential equation model has been utilized to simulate the photo-generated carrier dynamics in the nanocrystals and to fit the fluence-dependent differential absorption measurements. The average value of the Auger coefficient obtained from fitting to the measurements was γ = 5.9 ± 0.4 × 10−31 cm6 s−1. Similarly the average relaxation rate of the carriers was determined to be approximately τ = 110 ± 10 ps. Time-resolved measurements also revealed ~25 ps delay for the carriers to reach deep traps states which have a subsequent relaxation time of approximately 300 ps.

Keywords:
In2O3nanocrystals; Carrier dynamics; Femtosecond differential absorption spectroscopy; Auger coefficient