Figure 4.

Band gap structure of silicon nanonets with the same parameters but different passivation conditionsa110D3B4W2P13H (VBM: M or G, CBM: X, Eg: 0.96 eV),b110D3B4W2P13OH (VBM: M, CBM: X, Eg: 0.98 eV),c110D3B4W2P13O (VBM: G, CBM: G, Eg: 0.86 eV)

Lin et al. Nanoscale Research Letters 2009 4:409-413   doi:10.1007/s11671-009-9259-0