Physical and Electrical Performance of Vapor–Solid Grown ZnO Straight Nanowires
1 Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, China
2 Institute of Microstructure and Properties of Advanced Material, Beijing University of Technology, Beijing, China
Nanoscale Research Letters 2008, 4:165-168 doi:10.1007/s11671-008-9218-1Published: 3 December 2008
Physical and electrical properties of wurtzitic ZnO straight nanowires grown via a vapor–solid mechanism were investigated. Raman spectrum shows four first-order phonon frequencies and a second-order Raman frequency of the ZnO nanowires. Electrical and photoconductive performance of individual ZnO straight nanowire devices was studied. The results indicate that the nanowires reported here are n-type semi-conductors and UV light sensitive, and a desirable candidate for fabricating UV light nanosensors and other applications.