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Physical and Electrical Performance of Vapor–Solid Grown ZnO Straight Nanowires

JY Li1* and H Li2

Author Affiliations

1 Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, China

2 Institute of Microstructure and Properties of Advanced Material, Beijing University of Technology, Beijing, China

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Nanoscale Research Letters 2008, 4:165-168  doi:10.1007/s11671-008-9218-1

Published: 3 December 2008


Physical and electrical properties of wurtzitic ZnO straight nanowires grown via a vapor–solid mechanism were investigated. Raman spectrum shows four first-order phonon frequencies and a second-order Raman frequency of the ZnO nanowires. Electrical and photoconductive performance of individual ZnO straight nanowire devices was studied. The results indicate that the nanowires reported here are n-type semi-conductors and UV light sensitive, and a desirable candidate for fabricating UV light nanosensors and other applications.

Nanostructures; Nanosensors; ZnO