A Quaternary ZnCdSeTe Nanotip Photodetector
1 Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan, ROC
2 Materials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan, 325, Taiwan, ROC
3 Department of Electronic Engineering, Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan, ROC
4 Department of Information Technology and Communication, Shih Chien University, Neimen, Kaohsiung, 845, Taiwan, ROC
Nanoscale Research Letters 2009, 4:1540-1546 doi:10.1007/s11671-009-9432-5Published: 16 September 2009
The authors report the growth of needle-like high density quaternary Zn0.87Cd0.13Se0.98Te0.02nanotips on oxidized Si(100) substrate. It was found that average length and average diameter of the nanotips were 1.3 μm and 91 nm, respectively. It was also found that the as-grown ZnCdSeTe nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. Furthermore, it was found that the operation speeds of the fabricated ZnCdSeTe nanotip photodetector were fast with turn-on and turn-off time constants both less than 2 s.