Figure 3.

XRD (004) scan ofa0.5 µm GaSb on GaAs substrate grown using IMF and non-IMF growth mode, illustrating highly relaxed GaSb for the IMF growth, andb5 µm GaSb on GaAs substrate showing a narrow FWHM of ~20 arcsecs for the GaSb epitaxial layer

Jallipalli et al. Nanoscale Research Letters 2009 4:1458-1462   doi:10.1007/s11671-009-9420-9