Figure 6.
Transistor characteristic of back-gated single SnO2nanowire FET devices on silicon substrates:Ids–Vdscurves for gate voltages withVgs = 9 V to 0 in −3 V steps fromtoptobottom. Theinsetis the SEM image of the as-fabricated single SnO2nanowire
Li et al. Nanoscale Research Letters 2009 4:1434 doi:10.1007/s11671-009-9416-5 |
