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SnO2Nanowire Arrays and Electrical Properties Synthesized by Fast Heating a Mixture of SnO2and CNTs Waste Soot

Zi-Jiong Li12*, Zhen Qin3, Zhi-Hua Zhou2, Li-Ying Zhang2 and Ya-Fei Zhang2

Author Affiliations

1 Department of Physics, Zhengzhou University of Light Industry, 450007, Zhengzhou, People’s Republic of China

2 Research Institute of Micro/Nanometer Science & Technology, Shanghai Jiao Tong University, 200240, Shanghai, People’s Republic of China

3 College of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, 450011, Zhengzhou, People’s Republic of China

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Nanoscale Research Letters 2009, 4:1434-1438  doi:10.1007/s11671-009-9416-5

Published: 25 August 2009


SnO2nanowire arrays were synthesized by fast heating a mixture of SnO2and the carbon nanotubes waste soot by high-frequency induction heating. The resultant SnO2nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO2nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transconductance and on/off ratio. This work demonstrates a simple technique to the growth of nanomaterials for application in future nanoelectronic devices.

SnO2nanowires; Semiconducting; Field-effect transistor