Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductrors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, People’s Republic of China
3 Department of Physics, Beijing Jiaotong University, 100044, Beijing, People’s Republic of China
Nanoscale Research Letters 2009, 4:1315-1318 doi:10.1007/s11671-009-9398-3Published: 28 July 2009
In the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling, the binding energyEband spin-orbit split energy Г of the ground state of a hydrogenic donor impurity in AlGaN/GaN triangle-shaped potential heterointerface are calculated. We find that with the electric field of the heterojunction increasing, (1) the effective width of quantum well decreases and (2) the binding energy increases monotonously, and in the mean time, (3) the spin-orbit split energy Г decreases drastically. (4) The maximum of Г is 1.22 meV when the electric field of heterointerface is 1 MV/cm.