Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature
1 Institute of Modern Physics, Xiangtan University, 411105, Xiangtan, Hunan, China
2 Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China
3 Nanoscale Materials Center, National Institute for Materials Science, Tsukuba, 3050047, Japan
Nanoscale Research Letters 2009, 4:1135-1140 doi:10.1007/s11671-009-9367-xPublished: 24 June 2009
The field emission properties of SnO2nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2at the same applied electric field of 5.0 V/μm.