Open Access Open Badges Nano Express

Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature

JB Wang12*, K Li12, XL Zhong12, YC Zhou12, XS Fang3, CC Tang3 and Y Bando3

Author Affiliations

1 Institute of Modern Physics, Xiangtan University, 411105, Xiangtan, Hunan, China

2 Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China

3 Nanoscale Materials Center, National Institute for Materials Science, Tsukuba, 3050047, Japan

For all author emails, please log on.

Nanoscale Research Letters 2009, 4:1135-1140  doi:10.1007/s11671-009-9367-x

Published: 24 June 2009


The field emission properties of SnO2nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2at the same applied electric field of 5.0 V/μm.

SnO2nanowires; Chemical vapor deposition; Field emission; Annealing