Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3Nanowires Based on Porous Anodic Alumina Film
1 Nanomaterials & Nanotechnology Research Center, Tianjin University of Technology, 300384, Tianjin, China
2 Institute of Materials Physics, Tianjin University of Technology, 300384, Tianjin, China
3 Tianjin Key Lab for Photoelectric Materials & Devices, 300384, Tianjin, China
4 Key Laboratory of Display Materials & Photoelectronic Devices, Tianjin University of Technology, Ministry of Education, 300384, Tianjin, China
Nanoscale Research Letters 2009, 4:1126-1129 doi:10.1007/s11671-009-9368-9Published: 12 June 2009
Porous alumina film on aluminum with gel-like pore wall was prepared by a two-step anodization of aluminum, and the corresponding gel-like porous film was etched in diluted NaOH solution to produce alumina nanowires in the form of densely packed alignment. The resultant alumina nanowires were reacted with NH3and evaporated aluminum at an elevated temperature to be converted into densely packed aluminum nitride (AlN) nanowires. The AlN nanowires have a diameter of 15–20 nm larger than that of the alumina nanowires due to the supplement of the additional evaporated aluminum. The results suggest that it might be possible to prepare other aluminum compound nanowires through similar process.