Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties
1 School of Chemistry and Chemical Engineering / MOE of Key Laboratory of Bioinorganic and Synthetic Chemistry, Sun Yat-Sen University, Guangzhou, 510275, China
2 Institute of Optoelectronic and Functional Composite Material, Sun Yat-Sen University, Guangzhou, 510275, China
3 Instrumental Analysis & Research Center, Sun Yat-Sen University, Guangzhou, 510275, China
4 School of Science, Griffith University, Nathan, Qld 4111, Australia
Citation and License
Nanoscale Research Letters 2008, 4:47-53 doi:10.1007/s11671-008-9201-xPublished: 18 November 2008
Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO4)3-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along  facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS) and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template) and SDS (soft template).