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Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide

S Sriram1*, M Bhaskaran1, A Mitchell1, DRG Mitchell2 and G Kostovski1

Author Affiliations

1 Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, VIC, 3001, Australia

2 Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW, 2234, Australia

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Nanoscale Research Letters 2008, 4:29-33  doi:10.1007/s11671-008-9197-2

Published: 11 November 2008


We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were used between PSZT and silicon dioxide. The deposited thin films have been characterised using a combination of diffraction and microscopy techniques.

PSZT thin films; Silicon dioxide; Nanocrystal; XRD; Microscopy