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Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation

H Wang1, ZP Zhang1, XN Wang1*, Q Mo1, Y Wang1, JH Zhu1, HB Wang1, FJ Yang1 and Y Jiang2

Author Affiliations

1 Faculty of Physics and Electronic Technology, Hubei University, Wuhan, 430062, People’s Republic of China

2 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China

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Nanoscale Research Letters 2008, 3:309-314  doi:10.1007/s11671-008-9156-y

Published: 21 August 2008


By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80–250 nm were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation, crystal, and optical quality of the ZnO nanorod arrays highly depend on the crystal quality of ZnO seed layers, which was confirmed by the characterizations of field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and photoluminescence measurements. For ZnO seed layer with wurtzite structure, the ZnO nanorods grew exactly normal to the substrate with perfect wurtzite structure, strong near-band-edge emission, and neglectable deep-level emission. The nanorods synthesized on the polycrystalline ZnO seed layer presented random orientation, wide diameter, and weak deep-level emission. This article provides a C-free and Au-free method for large-scale synthesis of vertical-aligned ZnO nanorod arrays by controlling the crystal quality of the seed layer.

ZnO; Thermal evaporation; Nanorod arrays; Seed layer; Catalyst-free