The Influences of H2Plasma Pretreatment on the Growth of Vertically Aligned Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition
1 Department of Materials Science and Engineering, I-Shou University, No.1, Sec.1, Syuecheng Rd., Dashu Township, Kaohsiung, 840, Taiwan, ROC
2 Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan, ROC
3 Department of Chemical and Materials Engineering, National Chin-Yi University of Technology, Taichung, 411, Taiwan, ROC
4 Graduate Program in Electro-Optical Engineering, Tatung Universiy, Taipei, 10452, Taiwan, ROC
Nanoscale Research Letters 2008, 3:230-235 doi:10.1007/s11671-008-9141-5Published: 24 June 2008
The effects of H2flow rate during plasma pretreatment on synthesizing the multiwalled carbon nanotubes (MWCNTs) by using the microwave plasma chemical vapor deposition are investigated in this study. A H2and CH4gas mixture with a 9:1 ratio was used as a precursor for the synthesis of MWCNT on Ni-coated TaN/Si(100) substrates. The structure and composition of Ni catalyst nanoparticles were investigated using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The present findings showed that denser Ni catalyst nanoparticles and more vertically aligned MWCNTs could be effectively achieved at higher flow rates. From Raman results, we found that the intensity ratio of G and D bands (ID/IG) decreases with an increasing flow rate. In addition, TEM results suggest that H2plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles. As a result, the pretreatment plays a crucial role in modifying the obtained MWCNTs structures.