Deep Level Transient Spectroscopy in Quantum Dot Characterization
1 Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Goteborg, Sweden
2 Department of Analysis of Semiconductor Nanostructures, Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
Nanoscale Research Letters 2008, 3:179-185 doi:10.1007/s11671-008-9133-5Published: 28 May 2008
Deep level transient spectroscopy (DLTS) for investigating electronic properties of self-assembled InAs/GaAs quantum dots (QDs) is described in an approach, where experimental and theoretical DLTS data are compared in a temperature-voltage representation. From such comparative studies, the main mechanisms of electron escape from QD-related levels in tunneling and more complex thermal processes are discovered. Measurement conditions for proper characterization of the levels by identifying thermal and tunneling processes are discussed in terms of the complexity resulting from the features of self-assembled QDs and multiple paths for electron escape.