Size-dependent Fano Interaction in the Laser-etched Silicon Nanostructures
Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110016, India
Nanoscale Research Letters 2008, 3:105-108 doi:10.1007/s11671-008-9120-xPublished: 4 March 2008
Photo-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructures (NSs) prepared by laser-induced etching are presented here. Asymmetric and red-shifted Raman line-shapes are observed due to photo-excited Fano interaction in the quantum confined nanoparticles. The Fano interaction is observed between photo-excited electronic transitions and discrete phonons in Si NSs. Photo-excited Fano studies on different Si NSs show that the Fano interaction is high for smaller size of Si NSs. Higher Fano interaction for smaller Si NSs is attributed to the enhanced interference between photo-excited electronic Raman scattering and phonon Raman scattering.