Open Access Nano Express

Hot Photoluminescence in γ-In2Se3Nanorods

MD Yang1, CH Hu1, JL Shen1*, SM Lan2, PJ Huang3, GC Chi3, KH Chen4, LC Chen5 and TY Lin6

Author affiliations

1 Department of Physics, Chung Yuan Christian University, Chung-Li, Taiwan

2 Institute of Nuclear Energy Research, Longtan, Taoyuan, 32546, Taiwan

3 Department of Physics, National Central University, Chung-Li, 320, Taiwan

4 Institute of Atomic and Molecular Sciences Academia Sinica, Taipei, Taiwan

5 Center of Condensed Matter Science, National Taiwan University, Taipei, Taiwan

6 Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan

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Citation and License

Nanoscale Research Letters 2008, 3:427-430  doi:10.1007/s11671-008-9173-x

Published: 30 September 2008

Abstract

The energy relaxation of electrons in γ-In2Se3nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (Te) of the hot electrons. TheTevariation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality γ-In2Se3nanorods may be a promising material for the photovoltaic devices.

Keywords:
InSe nanorods; Hot photoluminescence; Energy relaxation