Nano Express
Hot Photoluminescence in γ-In2Se3Nanorods
1 Department of Physics, Chung Yuan Christian University, Chung-Li, Taiwan
2 Institute of Nuclear Energy Research, Longtan, Taoyuan, 32546, Taiwan
3 Department of Physics, National Central University, Chung-Li, 320, Taiwan
4 Institute of Atomic and Molecular Sciences Academia Sinica, Taipei, Taiwan
5 Center of Condensed Matter Science, National Taiwan University, Taipei, Taiwan
6 Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan
Nanoscale Research Letters 2008, 3:427-430 doi:10.1007/s11671-008-9173-x
Published: 30 September 2008Abstract
The energy relaxation of electrons in γ-In2Se3nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (Te) of the hot electrons. TheTevariation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality γ-In2Se3nanorods may be a promising material for the photovoltaic devices.
