Design and Analysis of Nanotube-Based Memory Cells
1 Department of Mechanical and Industrial Engineering, Center for Computer-Aided Design, The University of Iowa, 3131 Seamans Center, Iowa City, IA, 52242, USA
2 Department of Electrical and Computer Engineering, The University of Iowa, Iowa City, IA, 52242, USA
3 Department of Physics and Astronomy, The University of Iowa, Iowa City, IA, 52242, USA
4 Virtual Product Development (VPD), Heavy Construction and Mining Division—Decatur Facility, Caterpillar Inc, Decatur, IL, 6252, USA
Nanoscale Research Letters 2008, 3:416-420 doi:10.1007/s11671-008-9167-8Published: 9 September 2008
In this paper, we proposed a nanoelectromechanical design as memory cells. A simple design contains a double-walled nanotube-based oscillator. Atomistic materials are deposed on the outer nanotube as electrodes. Once the WRITE voltages are applied on electrodes, the induced electromagnetic force can overcome the interlayer friction between the inner and outer tubes so that the oscillator can provide stable oscillations. The READ voltages are employed to indicate logic 0/1 states based on the position of the inner tube. A new continuum modeling is developed in this paper to analyze large models of the proposed nanoelectromechanical design. Our simulations demonstrate the mechanisms of the proposed design as both static and dynamic random memory cells.