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Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles

K Zdansky1*, P Kacerovsky1, J Zavadil1, J Lorincik12 and A Fojtik3

Author Affiliations

1 Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, 18251, Prague 8, Czech Republic

2 Faculty of Science, J. E. Purkyne University, 40096, Usti nad Labem, Czech Republic

3 Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University, Prague, Czech Republic

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Nanoscale Research Letters 2007, 2:450-454  doi:10.1007/s11671-007-9085-1

Published: 16 August 2007


Pd nanoparticles were prepared with reverse micelles of water/AOT/isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modified when the Pd deposition is followed by a partial removal of the deposited AOT. The deposited Pd nanoparticles were investigated by optical mictroscopy, SIMS and SEM. Finally, Schottky diodes with barrier height as high as 1.07 eV were prepared by deposition of Pd nanoparticles on n-type InP and by a partial removal of superfluous AOT. These diodes are prospective structures for further testing as hydrogen sensors.

Nanoparticles; Electrophoresis; Schottky barrier; InP