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Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Q Cao, SF Yoon*, CY Liu and CY Ngo

Author Affiliations

School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Republic of Singapore

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Nanoscale Research Letters 2007, 2:303-307  doi:10.1007/s11671-007-9066-4

Published: 14 June 2007


Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm2) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm2) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.

Molecular beam epitaxy; Single lateral mode; InAs/InGaAs quantum dot; Pulsed anodic oxidation; Laser diode