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Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Rui Wang1, Soon Fatt Yoon1*, Fen Lu1, Wei Jun Fan1, Chong Yang Liu1, Ter-Hoe Loh2, Hoai Son Nguyen2 and Balasubramanian Narayanan2

Author Affiliations

1 School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore

2 Institute of Microelectronics, 11 Science Park Road Singapore Science Park II, Singapore, 117685, Singapore

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Nanoscale Research Letters 2007, 2:149-154  doi:10.1007/s11671-007-9046-8

Published: 27 February 2007


Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandkยทpmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

Si/SiGe; Coupled quantum well; UHV-CVD