Open Access Nano Express

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Rui Wang1, Soon Fatt Yoon1*, Fen Lu1, Wei Jun Fan1, Chong Yang Liu1, Ter-Hoe Loh2, Hoai Son Nguyen2 and Balasubramanian Narayanan2

Author Affiliations

1 School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore

2 Institute of Microelectronics, 11 Science Park Road Singapore Science Park II, Singapore, 117685, Singapore

For all author emails, please log on.

Nanoscale Research Letters 2007, 2:149-154  doi:10.1007/s11671-007-9046-8


The electronic version of this article is the complete one and can be found online at:


Received:24 January 2007
Accepted:8 February 2007
Published:27 February 2007

© 2007 to the authors

Abstract

Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

Keywords:
Si/SiGe; Coupled quantum well; UHV-CVD

Nano Express

[1-20]

References

  1. Franzo G, Priolo F, Coffa S, Polman A, Carnera A:

    Appl. Phys. Lett.. 1994, 64(17):2235.

    COI number [1:CAS:528:DyaK2cXkt1WnsLo%3D]

    Publisher Full Text OpenURL

  2. Pavesi L, Dal Negro L, Mazzoleni C, Franzo G, Priolo F:

    Nature. 2000, 408(6811):440.

    COI number [1:CAS:528:DC%2BD3cXos1Srsbo%3D]

    Publisher Full Text OpenURL

  3. Cloutier SG, Kossyrev PA, Xu J:

    Nat. Mater.. 2005, 4:887.

    COI number [1:CAS:528:DC%2BD2MXht1Gqu7nN]

    Publisher Full Text OpenURL

  4. Dehlinger G, Diehl L, Gennser U, Sigg H, Faist J, Ensslin K, Grützmacher D, Müller E:

    Science. 2000, 290:2277.

    COI number [1:CAS:528:DC%2BD3cXptFSnurk%3D]

    Publisher Full Text OpenURL

  5. Bormann I, Brunner K, Hackenbuchner S, Zandler G, Abstreiter G, Schmult S, Wegscheider W:

    Appl. Phys. Lett.. 2002, 80(13):2260.

    COI number [1:CAS:528:DC%2BD38XisVektbY%3D]

    Publisher Full Text OpenURL

  6. Bates R, Lynch SA, Paul DJ, Ikonic Z, Kelsall RW, Harrison P, Liew SL, Norris DJ, Cullis AG, Tribe WR, Arnone DD:

    Appl. Phys. Lett.. 2003, 83(20):4092.

    COI number [1:CAS:528:DC%2BD3sXovFygtbw%3D]

    Publisher Full Text OpenURL

  7. Faist J, Capasso F, Sivco DL, Sirtori C, Hutchinson AL, Cho AY:

    Science. 1994, 264:553. Publisher Full Text OpenURL

  8. Fukatsu S, Yoshida H, Usami N, Fujiwara A, Takahashi Y, Shiraki Y, Ito R:

    Thin Solid Films. 1992, 222:1.

    COI number [1:CAS:528:DyaK3sXovF2itw%3D%3D]

    Publisher Full Text OpenURL

  9. Fukatsu S, Shiraki Y:

    Appl. Phys. Lett.. 1993, 63(17):2378.

    COI number [1:CAS:528:DyaK2cXmsV2qtw%3D%3D]

    Publisher Full Text OpenURL

  10. Fukatsu S:

    Solid State Electron.. 1994, 37:817.

    COI number [1:CAS:528:DyaK2cXivVKmt7k%3D]

    Publisher Full Text OpenURL

  11. Sturm JC, Manoharan H, Lenchyshyn LC, Thewalt MLW, Rowell NL, Noël J-P, Houghton DC:

    Phys. Rev. Lett.. 1991, 66(10):1362.

    COI number [1:CAS:528:DyaK3MXitFOis7s%3D]

    Publisher Full Text OpenURL

  12. Herman MA, Bimberg D, Christen J:

    J. Appl. Phys.. 1991, 70:R1.

    COI number [1:CAS:528:DyaK3MXltVWlsrY%3D]

    Publisher Full Text OpenURL

  13. Acosta-Díaz P, Cano-Aguilar O, Castillo-Alvarado FL, Meléndez-Lira M, López-López M:

    Superficies Y Vacío. 2001, 12:39. OpenURL

  14. Robbins DJ, Canham LT, Barnett SJ, Pitt AD, Calcott P:

    J. Appl. Phys.. 1992, 71(3):1407.

    COI number [1:CAS:528:DyaK38Xhtl2ju7Y%3D]

    Publisher Full Text OpenURL

  15. Van de Walle CG, Martin RM:

    Phys. Rev. B. 1986, 34(8):5621. Publisher Full Text OpenURL

  16. Van de Walle CG:

    Phys. Rev. B. 1989, 39(3):1871. Publisher Full Text OpenURL

  17. Paul DJ:

    Scmicond. Sci. Technol.. 2004, 19:R75.

    COI number [1:CAS:528:DC%2BD2cXpvVyntrg%3D]

    Publisher Full Text OpenURL

  18. Dang YX, Fan WJ, Ng ST, Yoon SF, Zhang DH:

    J. Appl. Phys.. 2005, 97(10):103718. Publisher Full Text OpenURL

  19. Dang YX, Fan WJ, Lu F, Wang H, Zhang DH, Yoon SF:

    J. Appl. Phys.. 2006, 99(7):076108. Publisher Full Text OpenURL