SpringerOpen Newsletter

Receive periodic news and updates relating to SpringerOpen.

Open Access Nano Express

Modification of alumina matrices through chemical etching and electroless deposition of nano-Au array for amperometric sensing

Arūnas Jagminas1*, Julijana Kuzmarskytė1, Gintaras Valinčius2, Luciana Malferrari3 and Albertas Malinauskas1

Author Affiliations

1 Institute of Chemistry, Goštauto 9, 01108, Vilnius, Lithuania

2 Institute of Biochemistry, Mokslininkų 12, 08412, Vilnius, Lithuania

3 Instituto Nacionale di Fisica Nucleare, viale Berti-Pichat 6/2, 40127, Bologna, Italia

For all author emails, please log on.

Nanoscale Research Letters 2007, 2:130-134  doi:10.1007/s11671-007-9043-y

The electronic version of this article is the complete one and can be found online at:


Received:29 December 2006
Accepted:26 January 2007
Published:2 March 2007

© 2007 to the authors

Abstract

Simple nanoporous alumina matrix modification procedure, in which the electrically highly insulating alumina barrier layer at the bottom of the pores is replaced with the conductive layer of the gold beds, was described. This modification makes possible the direct electron exchange between the underlying aluminum support and the redox species encapsulated in the alumina pores, thus, providing the generic platform for the nanoporous alumina sensors (biosensors) with the direct amperometric signal readout fabrication.

Keywords:
EIS; Modification morphology; Nanoparticles; Porous alumina

Nano Express

[1-27] and Supplementary Material 1

Electronic Supplementary Material. Supplementary material is available in the online version of this article at (doi: 10.1007/s11671-007-9043-2) and is accessible for authorized users.

Format: PDF Size: 180KB Download file

This file can be viewed with: Adobe Acrobat ReaderOpen Data

References

  1. Li AP, Müller F, Birner A, Nielsch K, Göselle U:

    J. Appl. Phys. 1998, 84:6023.

    COI number [1:CAS:528:DyaK1cXntlWhtL0%3D]

    Publisher Full Text OpenURL

  2. Jagminas A, Bigeliene D, Mikulskas I, Tomašiūnas R:

    J. Cryst. Growth. 2001, 233:591.

    COI number [1:CAS:528:DC%2BD3MXmvVKksro%3D]

    Publisher Full Text OpenURL

  3. Lee W, Lee J-K:

    Adv. Mater. 2002, 14:1187.

    COI number [1:CAS:528:DC%2BD38XnsV2mtb4%3D]

    Publisher Full Text OpenURL

  4. Martin CR, Parthasarathy R, Menon V:

    Electrochim. Acta. 1994, 39:1309.

    COI number [1:CAS:528:DyaK2cXkvVClsLk%3D]

    Publisher Full Text OpenURL

  5. Al-Mawlawi D, Liu CZ, Moskovits M:

    J. Mater. Resp. 1994, 9:1014.

    COI number [1:CAS:528:DyaK2cXivVKhsbY%3D]

    OpenURL

  6. Murphy CJ, Jana NR:

    Adv. Mater. 2002, 14:80.

    COI number [1:CAS:528:DC%2BD38XmtlSisQ%3D%3D]

    Publisher Full Text OpenURL

  7. Klein JD, Herrick RD, Palmer ID, Sailor MJ, Brumlik CJ, Martin CR:

    Chem. Mater. 1993, 5:902.

    COI number [1:CAS:528:DyaK3sXkvVemu7k%3D]

    Publisher Full Text OpenURL

  8. Xu D, Xu Y, Chen D, Guo G, Gui L, Tang Y:

    Adv. Mater. 2000, 12:520.

    COI number [1:CAS:528:DC%2BD3cXkslCjtL0%3D]

    Publisher Full Text OpenURL

  9. Sander MS, Prieto AL, Gronsky R, Sands T, Stacy AM:

    Adv. Mater. 2002, 19(9):665. Publisher Full Text OpenURL

  10. Joo J, Park KT, Kim BH, Kim MS, Lee SY, Jeong CK, Lee JK, Park DH, Yi WK, Lee GH, Ryn KS:

    Synthetic Metals. 2003, 7–9:135. OpenURL

  11. Li P, Papadopoulos C, Xu JM, Moskovits M:

    Appl. Phys. Lett. 1999, 75:367.

    COI number [1:CAS:528:DyaK1MXksVeqsLg%3D]

    Publisher Full Text OpenURL

  12. Kyotani T, Tsai L, Tomita A:

    Chem. Mater. 1996, 8:2109.

    COI number [1:CAS:528:DyaK28XksFahsrk%3D]

    Publisher Full Text OpenURL

  13. Ishikawa Y, Matsumoto Y:

    Electrochim. Acta. 2001, 46:2819.

    COI number [1:CAS:528:DC%2BD3MXjvVOqs74%3D]

    Publisher Full Text OpenURL

  14. Mozalev A, Magaino S, Imai H:

    Electrochim. Acta. 2001, 46:2825.

    COI number [1:CAS:528:DC%2BD3MXjvVOqs78%3D]

    Publisher Full Text OpenURL

  15. Yelton WG, Pfeifer KB, Staton AW:

    J. Electrochem. Soc. 2002, 149(1):H1.

    COI number [1:CAS:528:DC%2BD38Xlt1eqtg%3D%3D]

    Publisher Full Text OpenURL

  16. Yu A, Liang Z, Cho J, Caruso F:

    Nano Lett. 2003, 3:1203.

    COI number [1:CAS:528:DC%2BD3sXmt1ejtbw%3D]

    Publisher Full Text OpenURL

  17. Al-Mawlawi D, Coombs N, Moskovits MJ:

    Appl. Phys. 1991, 70:4421.

    COI number [1:CAS:528:DyaK3MXmsVKgsrc%3D]

    Publisher Full Text OpenURL

  18. Preston CK, Moskovits M:

    J. Phys. Chem. 1993, 97:8495.

    COI number [1:CAS:528:DyaK3sXltVCqsbk%3D]

    Publisher Full Text OpenURL

  19. Mikulskas I, Juodkazis S, Jagminas A, Meškinis Š, Dumas JG, Vaitkus J, Tomašiūnas R:

    Optic. Mater. 2001, 17: 343.

    COI number [1:CAS:528:DC%2BD3MXkvF2ns78%3D]

    Publisher Full Text OpenURL

  20. Pan S, Rothberg LJ:

    Nano Lett. 2003, 3(6):811.

    COI number [1:CAS:528:DC%2BD3sXjtFaqtLw%3D]

    Publisher Full Text OpenURL

  21. Wang Z, Haasch RT, Lee GU:

    Langmuir. 2005, 21(4):1153.

    COI number [1:CAS:528:DC%2BD2MXjs1Ohtg%3D%3D]

    Publisher Full Text OpenURL

  22. Römer W, Steinem C:

    Biophysical J. 2004, 86:955. Publisher Full Text OpenURL

  23. Diggle JW, Downie TC, Goulding CW:

    Chem. Rev. 1969, 69:365.

    COI number [1:CAS:528:DyaF1MXks1entbY%3D]

    Publisher Full Text OpenURL

  24. Qi G, Chen X, Shao Z:

    Thin Solid Films. 2002, 406:204.

    COI number [1:CAS:528:DC%2BD38Xjt1Kis7g%3D]

    Publisher Full Text OpenURL

  25. Link S, El-Sayed MA:

    J. Phys. Chem. 2004, B 43:4519. OpenURL

  26. Jagminiene A, Valinčius G, Riaukaite A, Jagminas A:

    J. Cryst. Growth. 2005, 274:622.

    COI number [1:CAS:528:DC%2BD2MXmtFyrsw%3D%3D]

    Publisher Full Text OpenURL

  27. De Laet J, Terryn H, Vereecken J:

    Electrochim. Acta. 1995, 41:1155. Publisher Full Text OpenURL