Open Access Nano Express

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

NW Strom, Zh M Wang, JH Lee*, ZY AbuWaar, Yu I Mazur and GJ Salamo

Author Affiliations

Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA

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Nanoscale Research Letters 2007, 2:112-117  doi:10.1007/s11671-007-9040-1

Published: 8 February 2007

Abstract

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

Keywords:
GaAs/GaAs droplet homo-epitaxy; InAs quantum dots; Molecular beam epitaxy; Self-assembly