Open Access Nano Express

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

NW Strom, Zh M Wang, JH Lee*, ZY AbuWaar, Yu I Mazur and GJ Salamo

Author Affiliations

Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA

For all author emails, please log on.

Nanoscale Research Letters 2007, 2:112-117  doi:10.1007/s11671-007-9040-1


The electronic version of this article is the complete one and can be found online at:


Received:10 October 2006
Accepted:17 January 2007
Published:8 February 2007

© 2007 to the authors

Abstract

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

Keywords:
GaAs/GaAs droplet homo-epitaxy; InAs quantum dots; Molecular beam epitaxy; Self-assembly

Nano Express

[1-26]

Acknowledgments

The authors thank Dr. John Shultz for his strong support in the facility maintenance and the financial support of the NSF (through Grant DMR-0520550). The WSxM© image processing program was used in this paper (http://www.nanotec.es).

References

  1. Sugawara M, Mukai K, Nakata Y, Ishikawa H, Sakamoto A:

    Phys. Rev. B. 2000, 61:7595.

    COI number [1:CAS:528:DC%2BD3cXhvVSjt7c%3D]

    Publisher Full Text OpenURL

  2. Thompson RM, Stevenson RM, Shields AJ, Farrer I, Lobo CJ, Ritchie DA, Leadbeater ML, Pepper M:

    Phys. Rev. B. 2001, 64:201302(R). OpenURL

  3. Yuan Z, Kardynal BE, Mark Stevenson R, Shields AJ, Lobo CJ, Cooper K, Beattie NS, Ritchie DA, Pepper M:

    Science. 2002, 295:102.

    COI number [1:CAS:528:DC%2BD38XksVeruw%3D%3D]

    Publisher Full Text OpenURL

  4. Unitt DC, Bennett AJ, Atkinson P, Ritchie DA, Shields AJ:

    Phys. Rev B. 2005, 72:33318. Publisher Full Text OpenURL

  5. Kroutvar M, Ducommun Y, Finley JJ, Bichler M, Abstreiter G, Zrenner A:

    Appl. Phys. Lett. 2003, 83:443.

    COI number [1:CAS:528:DC%2BD3sXlsFKisb8%3D]

    Publisher Full Text OpenURL

  6. Shields AJ, O’Sullivan MP:

    Appl. Phys. Lett.. 2000, 76:3673.

    COI number [1:CAS:528:DC%2BD3cXktV2nt74%3D]

    Publisher Full Text OpenURL

  7. Pradhan N, Goorskey D, Thessing J, Peng X:

    J. Am. Chem. Soc.. 2005, 127:17586.

    COI number [1:CAS:528:DC%2BD2MXht1CkurvE]

    Publisher Full Text OpenURL

  8. Lee JH, Wang ZhM, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ:

    Nanotechnology. 2006, 17:2275.

    COI number [1:CAS:528:DC%2BD28Xmtl2nurk%3D]

    Publisher Full Text OpenURL

  9. Sun Z, Yang B:

    Nanoscale Res. Lett.. 2006, 1:46. Publisher Full Text OpenURL

  10. Wang ZhM, Lee JH, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ:

    Appl. Phys. Lett.. 2006, 88:233102. Publisher Full Text OpenURL

  11. Kohmoto S, Nakamura H, Ishikawa T, Asakawa K:

    Appl. Phys. Lett.. 1999, 75:3488.

    COI number [1:CAS:528:DyaK1MXnsFyku7g%3D]

    Publisher Full Text OpenURL

  12. Song HZ, Usuki T, Ohshima T, Sakuma Y, Kawabe M, Okada Y, Takemoto K, Miyazawa T, Hirose S, Nakata Y, Takatsu M, Yokoyama N:

    Nanoscale Res. Lett.. 2006, 2:160. Publisher Full Text OpenURL

  13. Lundstrom T, Schoenfeld W, Lee H, Petroff PM:

    Science. 1999, 286:2312.

    COI number [1:CAS:528:DC%2BD3cXjslag]

    Publisher Full Text OpenURL

  14. Songmuang R, Kiravittaya S, Schmidt OG:

    Appl. Phys. Lett.. 2003, 82:892. Publisher Full Text OpenURL

  15. Warburton RJ, Scha¨flein C, Haft D, Bickel F, Lorke A, Karrai K, Garcia JM, Schoenfeld W, Petroff PM:

    Nature. 2000, 405:926.

    COI number [1:CAS:528:DC%2BD3cXks1Wmu7s%3D]

    Publisher Full Text OpenURL

  16. Volmer M, Weber A:

    Z. Phys. Chem.. 1926, 119:277.

    COI number [1:CAS:528:DyaB28XhsFOmtQ%3D%3D]

    OpenURL

  17. Wang ZM, Holmes K, Shultz JL, Salamo GJ:

    Phys. Stat. Sol. (a). 2005, 202:R85.

    COI number [1:CAS:528:DC%2BD2MXmtVegu7w%3D]

    Publisher Full Text OpenURL

  18. Gong Z, Niu ZC, Huang SS, Fang ZD, Sun BQ, Xia JB:

    Appl. Phys. Lett.. 2005, 87:93116. Publisher Full Text OpenURL

  19. Djie HS, Gunawan O, Wang D-N, Ooi BS, Hwang JCM:

    Phys. Rev. B. 2006, 73:155324. Publisher Full Text OpenURL

  20. Patella F, Fanfoni M, Arciprete F, Nufris S, Placidi E, Balzarotti A, Patella F, et al.:

    Appl. Phys. Lett.. 2001, 78:320.

    COI number [1:CAS:528:DC%2BD3MXjt1ygtQ%3D%3D]

    Publisher Full Text OpenURL

  21. Godefroo S, Maes J, Hayne M, Moshchalkov VV, Henini M, Pulizzi F, Patanè A, Eaves L:

    J. Appl. Phys.. 2005, 96:2535. Publisher Full Text OpenURL