Table 1

Growth conditions of silicon nanowires (Q = 40 sccm, T = 500 °C)
No. Time (min) Pressure (T) Length (μm)
1 10 0.1 1
2 10 0.4 1
3 20 0.1 2.5
4 20 0.4 15
5 40 0.1 8
6 40 0.4 35
7 60 0.1 7
8 60 0.4 30

Verplanck et al.

Verplanck et al. Nanoscale Research Letters 2007 2:577-596   doi:10.1007/s11671-007-9102-4

Open Data