Table 1
Growth conditions of silicon nanowires (Q = 40 sccm, T = 500 °C)
No.	Time (min)	Pressure (T)	Length (μm)
1	10	0.1	1
2	10	0.4	1
3	20	0.1	2.5
4	20	0.4	15
5	40	0.1	8
6	40	0.4	35
7	60	0.1	7
8	60	0.4	30

Verplanck et al. Nanoscale Research Letters 2007 2:577   doi:10.1186/1556-276X-2-577