Figure 30.

SEM images of silicon nanowires grown on a silicon wafer coated with a thin gold layer (4 nm) at 500 °C (a) P = 0.1 T, (b) P = 0.4 T. The silane flow is of 40 sccm, the time of growth is 60 min

Verplanck et al. Nanoscale Research Letters 2007 2:577-596   doi:10.1007/s11671-007-9102-4