Open Access Nano Express

Electronic Structure of a Hydrogenic Acceptor Impurity in Semiconductor Nano-structures

Shu-Shen Li12* and Jian-Bai Xia12

Author Affiliations

1 CCAST (World Lab.), P. O. Box 8730, Beijing, 100080, P.R. China

2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, P.R. China

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Nanoscale Research Letters 2007, 2:554-560  doi:10.1007/s11671-007-9098-9

Published: 9 October 2007

Abstract

The electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of effective-mass envelope-function theory. The results show that (1) the energy levels monotonically decrease as the quantum confinement sizes increase; (2) the impurity energy levels decrease more slowly for QWWs and QDs as their sizes increase than for QWs; (3) the changes of the acceptor binding energies are very complex as the quantum confinement size increases; (4) the binding energies monotonically decrease as the acceptor moves away from the nano-structures’ center; (5) as the symmetry decreases, the degeneracy is lifted, and the first binding energy level in the QD splits into two branches. Our calculated results are useful for the application of semiconductor nano-structures in electronic and photoelectric devices.