Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
1 Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200, Australia
2 National Institute of Materials Physics, Str. Atomistilor 105bis, P.O. Box MG-7, Magurele, 077125, Romania
Nanoscale Research Letters 2007, 2:550-553 doi:10.1007/s11671-007-9097-xPublished: 25 September 2007
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.