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Open Access Nano Express

Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing

S Mokkapati1*, Sichao Du1, M Buda2, L Fu1, HH Tan1 and C Jagadish1

Author Affiliations

1 Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200, Australia

2 National Institute of Materials Physics, Str. Atomistilor 105bis, P.O. Box MG-7, Magurele, 077125, Romania

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Nanoscale Research Letters 2007, 2:550-553  doi:10.1007/s11671-007-9097-x

Published: 25 September 2007

Abstract

We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.

Keywords:
Quantum dot lasers; Ion implantation