Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic Field
Gyumri State Pedagogical Institute, 4 P. Sevak street, Gyumri, 3126, Armenia
Nanoscale Research Letters 2007, 2:515-518 doi:10.1007/s11671-007-9084-2Published: 22 September 2007
The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane’s dispersion law in a magnetic fieldBparallel to the wire axis has been calculated as a function of the radius of the wire and magnitude ofB, using a variational approach. It is shown that when wire radius is less than the Bohr radius of the impurity, the nonparabolicity of dispersion law of charge carriers leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid growth of binding energy with growth ofB.