The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
1 CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
2 Tyndall National Institute, University College Cork, Cork, Ireland
Nanoscale Research Letters 2007, 2:509-511 doi:10.1007/s11671-007-9092-2Published: 13 September 2007
We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.