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The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

Gabriele Rainò1*, Giuseppe Visimberga2, Abdelmajid Salhi1, Maria T Todaro1, Massimo De Vittorio1, Adriana Passaseo1, Roberto Cingolani1 and Milena De Giorgi1

Author Affiliations

1 CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy

2 Tyndall National Institute, University College Cork, Cork, Ireland

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Nanoscale Research Letters 2007, 2:509-511  doi:10.1007/s11671-007-9092-2

Published: 13 September 2007


We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

Ultra fast spectroscopy; Carrier relaxation; Quantum dots