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Open Access Nano Express

Experimental investigation on the bi-directional growing mechanism of the foils laminate approach in AAO fabrication

Jen-Yi Fan1, Ming-Chun Chien2 and Gou-Jen Wang1*

Author Affiliations

1 Department of Mechanical Engineering, National Chung-Hsing University, Taichung, 40227, Taiwan

2 Department of Electronic Engineering, Chung Chou Institute of Technology, Yuan-lin, 510, Taiwan

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Nanoscale Research Letters 2006, 2:49-53  doi:10.1007/s11671-006-9029-1

The electronic version of this article is the complete one and can be found online at:


Received:4 August 2006
Accepted:23 October 2006
Published:28 November 2006

© 2006 to the authors

Abstract

The foils laminate approach can be implemented to grow bi-directional porous pattern from both the top and bottom surfaces of an aluminum foil. It was intuitively inferred that leakage of etchant from the clamped area can be a feasible cause to have the upward pores grow in the notches of the unpolished surface. This leakage hypothesis has been disproved by the leakage blocking and triple layers laminate experiments. It is further inferred that the non-uniformity of the thickness or material properties of the aluminum foil causes non-uniformed anodization rate along the sample surface. The fast oxidized areas create a pathway for leakage such that a shorter porous array from the back side is observed. Experiments with the process time being reduced by two hours validate this inference

Keywords:
Anodic aluminum oxide; Foils laminate approach; Non-uniformed anodization

Nano Express

[1-11]

Acknowledgements

The authors would like to express their gratitude to the reviewers for their valuable comments and suggestions. The authors also would like to thank the National Science Council of Taiwan, for financially supporting this work under Contract No. NSC-94–2212-E-005–010. The Center of Nanoscience and Nanotechnology at National Chung-Hsing University, Taiwan, is appreciated for use of its facilities.

References

  1. Hwang SK, Lee J, Jeong SH, Lee PS, Lee KH:

    Nanotechnology. 2005, 16:850-858.

    COI number [1:CAS:528:DC%2BD2MXnsl2mtL0%3D]

    Publisher Full Text OpenURL

  2. Yu WJ, Cho YS, Choi GS, Kim D:

    Nanotechnology. 2005, 16:S291-S295.

    COI number [1:CAS:528:DC%2BD2MXmt1CqtL4%3D]

    Publisher Full Text OpenURL

  3. Yanagishita T, Nishio K, Masuda H:

    Adv. Mater.. 2005, 17(18):2241-2243.

    COI number [1:CAS:528:DC%2BD2MXhtVKqsbvK]

    Publisher Full Text OpenURL

  4. Kim L, Yoon SM, Kim J, Suh JS:

    Synthetic Met.. 2004, 140:135-138.

    COI number [1:CAS:528:DC%2BD2cXhsVOntbw%3D]

    Publisher Full Text OpenURL

  5. Bae EJ, Choi WB, Jeong KS, Chu JU, Park GS, Song S, Yoo IK:

    Adv. Mater.. 2002, 14(4):277-279.

    COI number [1:CAS:528:DC%2BD38XhvFKjs7w%3D]

    Publisher Full Text OpenURL

  6. Li AP, Miller F, Birner A, Nielsch K, Gösele U:

    Adv. Mater.. 1999, 11(6):483-486.

    COI number [1:CAS:528:DyaK1MXjtFejsbg%3D]

    Publisher Full Text OpenURL

  7. Krishnan R, Nguyen HQ, Thompson CV, Choi WK, Foo YL:

    Nanotechnology. 2005, 16:841-845.

    COI number [1:CAS:528:DC%2BD2MXnsl2mt7c%3D]

    Publisher Full Text OpenURL

  8. Jeong SH, Lee KH:

    Synthetic Met.. 2003, 139:385-390.

    COI number [1:CAS:528:DC%2BD3sXlsl2iurw%3D]

    Publisher Full Text OpenURL

  9. Yan J, Rao GV, Barela M, Brevnov DA, Jiang Y, Xu H, Lopez GP, Atanassov PB:

    Adv. Mater.. 2003, 15(23):2015-2018.

    COI number [1:CAS:528:DC%2BD3sXhtVWgt77F]

    Publisher Full Text OpenURL

  10. Sun Z, Kim HK:

    Appl. Phys. Lett.. 2002, 81(18):3458-3460.

    COI number [1:CAS:528:DC%2BD38Xot1Sls78%3D]

    Publisher Full Text OpenURL

  11. Wang GJ, Peng CS:

    J. Nanosci. Nanotechnol.. 2006, 6(4):1004-1008.

    COI number [1:CAS:528:DC%2BD28XksV2jtb4%3D]

    Publisher Full Text OpenURL