Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
1 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany
2 5. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550, Stuttgart, Germany
Nanoscale Research Letters 2006, 1:172-176 doi:10.1007/s11671-006-9019-3Published: 27 September 2006
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.