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Electronic structures of GaAs/AlxGa1-xAs quantum double rings

Shu-Shen Li* and Jian-Bai Xia

Author Affiliations

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 912, Beijing, 100083, People’s Republic of China

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Nanoscale Research Letters 2006, 1:167-171  doi:10.1007/s11671-006-9010-z

The electronic version of this article is the complete one and can be found online at:

Published:11 August 2006

© 2006 to the authors


In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

Electronic structures; GaAs; Quantum double rings; Nanostructures; Effective-mass theory; Band mixing; 78.20.Bh; 78.66.Fd

Nano Express



This work was supported by the National Natural Science Foundation of China and the Special Foundations for State Major Basic Research Program of China (Grant No. G2001CB309500).


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