Open Access Nano Express

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy

L Wang1, A Rastelli1*, S Kiravittaya1, R Songmuang1, OG Schmidt1, B Krause2 and TH Metzger2

Author Affiliations

1 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany

2 European Synchrotron Radiation Facility, Boîte Postale 220, F-38043, Grenoble Cedex, France

For all author emails, please log on.

Nanoscale Research Letters 2006, 1:74-78  doi:10.1007/s11671-006-9003-y


The electronic version of this article is the complete one and can be found online at:


Published:26 July 2006

© 2006 to the authors

Abstract

We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2.

Keywords:
Lateral quantum-dot molecules; Quantum dots; Quantum dot composition; Self-assembled growth

Nano Express

[1-24]

Acknowledgment

This work was financially supported by SFB/TR21 and BMBF (03N8711).

References

  1. Reina JH, Quiroga L, Johnson NF:

    Phys. Rev. A. 2000, 62:012305. Publisher Full Text OpenURL

  2. Burkard G, Loss D:

    Phys. Rev. B. 1999, 59:2070.

    COI number [1:CAS:528:DyaK1MXkt12rug%3D%3D]

    Publisher Full Text OpenURL

  3. Shtrichman I, Metzner C, Gerardot BD, Schoenfeld WV, Petroff PM:

    Phys. Rev. B. 2002, 65:081303. Publisher Full Text OpenURL

  4. Krenner HJ, Sabathil M, Clark EC, Kress A, Schuh D, Bichler M, Abstreiter G, Finley JJ:

    Phys. Rev. Lett.. 2005, 94:057402.

    COI number [1:STN:280:DC%2BD2M7ls1Oitw%3D%3D]

    Publisher Full Text OpenURL

  5. Gerardot BD, Strauf S, de Dood MJA, Bychkov AM, Badolato A, Hennessy K, Hu EL, Bouwmeester D, Petroff PM:

    Phys. Rev. Lett.. 2005, 95:137403. Publisher Full Text OpenURL

  6. Stinaff EA, Scheibner M, Bracker AS, Ponomarev IV, Korenev VL, Ware ME, Doty MF, Reinecke TL, Gammon D:

    Science. 2006, 311:636.

    COI number [1:CAS:528:DC%2BD28XptVykug%3D%3D]

    Publisher Full Text OpenURL

  7. Unold T, Mueller K, Lienau Ch, Elsaesser T, Wieck AD:

    Phys. Rev. Lett.. 2005, 94:137404. Publisher Full Text OpenURL

  8. Songmuang R, Kiravittaya S, Schmidt OG:

    Appl. Phys. Lett.. 2003, 82:2892.

    COI number [1:CAS:528:DC%2BD3sXjtlSisrw%3D]

    Publisher Full Text OpenURL

  9. Lippen Tv, Nötzel R, Hamhuis GJ, Wolter JH:

    J. Appl. Phys.. 2005, 97:044301. Publisher Full Text OpenURL

  10. Schmidt OG, Deneke Ch, Kiravittaya S, Songmuang R, Heidemeyer H, Nakamura Y, Zapf-Gottwick R, Müller C, Jin-Phillipp NY:

    IEEE J. Sel. Top. Quant. Electron.. 2002, 8:1025.

    COI number [1:CAS:528:DC%2BD38XpsVOgtb0%3D]

    Publisher Full Text OpenURL

  11. Kiravittaya S, Songmuang R, Jin-Phillipp NY, Panyakeow S, Schmidt OG:

    J. Cryst. Growth. 2003, 251:258.

    COI number [1:CAS:528:DC%2BD3sXitlWls7g%3D]

    Publisher Full Text OpenURL

  12. Krause B, Metzger TH, Rastelli A, Songmuang R, Kiravittaya S, Schmidt OG:

    Phys. Rev. B. 2005, 72:085339. Publisher Full Text OpenURL

  13. Schuler H, Kaneko T, Lipinski M, Eberl K:

    Semicond. Sci. Technol.. 2000, 15:169.

    COI number [1:CAS:528:DC%2BD3cXhtlSjs70%3D]

    Publisher Full Text OpenURL

  14. Rastelli A, Ulrich SM, Pavelescu E-M, Leinonen T, Pessa M, Michler P, Schmidt OG:

    Superlatt. Microstruct.. 2004, 36:181.

    COI number [1:CAS:528:DC%2BD2cXpsVKhsb8%3D]

    Publisher Full Text OpenURL

  15. Cho SO, Wang ZhM, Salamo GJ:

    Appl. Phys. Lett.. 2005, 86:113106. Publisher Full Text OpenURL

  16. Placidi E, Arciprete F, Sessi V, Fanfoni M, Patella F, Balzarotti A:

    Appl. Phys. Lett.. 2005, 86:241913. Publisher Full Text OpenURL

  17. Lita B, Goldmana RS, Phillips JD, Bhattacharya PK:

    Appl. Phys. Lett.. 1999, 75:2797.

    COI number [1:CAS:528:DyaK1MXmslOgtrY%3D]

    Publisher Full Text OpenURL

  18. Schmidt OG, Eberl K:

    Phys. Rev. B. 2000, 61:13721.

    COI number [1:CAS:528:DC%2BD3cXjs1Smt7k%3D]

    Publisher Full Text OpenURL

  19. Biasiol G, Kapon E:

    Phys. Rev. Lett.. 1998, 81:2962.

    COI number [1:CAS:528:DyaK1cXmsFyit7g%3D]

    Publisher Full Text OpenURL

  20. Kiravittaya S, Heidemeyer H, Schmidt OG:

    Appl. Phys. Lett.. 2005, 86:263113. Publisher Full Text OpenURL

  21. Garcia JM, Mankad T, Holtz PO, Wellman PJ, Petroff PM:

    Appl. Phys. Lett.. 1998, 72:3172.

    COI number [1:CAS:528:DyaK1cXjsFCktrk%3D]

    Publisher Full Text OpenURL

  22. Beirne GJ, Hermannstädter C, Wang L, Rastelli A, Schmidt OG, Michler P:

    Phys. Rev. Lett.. 2006, 96:137401.

    COI number [1:STN:280:DC%2BD283osFSmsQ%3D%3D]

    Publisher Full Text OpenURL