Nano Express
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
-
* Corresponding author: Zhiming M Wang zmwang@uark.edu
Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA
Nanoscale Research Letters 2006, 1:57-61 doi:10.1007/s11671-006-9002-z
The electronic version of this article is the complete one and can be found online at:
| Published: | 25 July 2006 |
© 2006 to the authors
Abstract
The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.
Keywords:
Quantum dots; Droplet epitaxyNano Express
Acknowledgments
We thank Dr. John L. Shultz for his technical assistance regarding the MBE system.
References
-
Bimberg D, Grundmann M, Ledentsov NN: Quantum Dot Heterostructures. Wiley, Chichester; 1999.
-
Leonard D, Krishnamurthy M, Reaves CM, DenBaars SP, Petroff PM:
Appl. Phys. Lett.. 1993, 63:3203.
COI number [1:CAS:528:DyaK2cXht1WrtbY%3D]
Publisher Full Text -
Moison JM, Houzay F, Barthe F, Leprince L, Andre E, Vatel O:
Appl. Phys. Lett.. 1994, 64:196.
COI number [1:CAS:528:DyaK2cXitVGksb0%3D]
Publisher Full Text -
Lee CD, Park C, Lee HJ, Lee KS, Park SJ, Park CG, Noh SK, Koguchi N:
Jpn. J. Appl. Phys.. 1998, 37:7158.
COI number [1:CAS:528:DyaK1MXns1ClsQ%3D%3D]
Publisher Full Text -
Watanabe K, Koguchi N, Gotoh Y:
Jpn. J. Appl. Phys.. 2000, 39:L79.
COI number [1:CAS:528:DC%2BD3cXhtlSqt7w%3D]
Publisher Full Text -
Mano T, Kuroda T, Sanguinetti S, Ochiai T, Tateno T, Kim J, Noda T, Kawabe M, Sakoda K, Kido G, Koguchi N:
Nano Lett.. 2005, 5:425.
COI number [1:CAS:528:DC%2BD2MXhtVKlur8%3D]
PubMed Abstract | Publisher Full Text -
Wang ZhM, Holmes K, Shultz JL, Salamo GJ:
Phys. Stat. Sol. (a). 2005, 202:R85.
COI number [1:CAS:528:DC%2BD2MXmtVegu7w%3D]
Publisher Full Text -
Li SS, Xia JB, Liu JL, Yang FH, Niu ZC, Feng SL, Zheng HZ:
Pro. Natl. Acad. Sci.. 2001, 98:11847.
COI number [1:CAS:528:DC%2BD3MXns1equrw%3D]
Publisher Full Text -
Lee H, Johnson JA, He MY, Speck JS, Petroff PM:
Appl. Phys. Lett.. 2001, 78:105.
COI number [1:CAS:528:DC%2BD3MXmvVCm]
Publisher Full Text -
Lee SC, Dawson LR, Malloy KJ, Brueck SR:
Appl. Phys. Lett.. 2001, 79:2630.
COI number [1:CAS:528:DC%2BD3MXnsFWltbg%3D]
Publisher Full Text -
Schmidt OG, Jin-Phillipp NY, Lange C, Denker U, Eberl K, Schreiner R, Grabeldinger H, Schweizer H:
Appl. Phys. Lett.. 2000, 77:4139.
COI number [1:CAS:528:DC%2BD3cXovVKiu7o%3D]
Publisher Full Text -
Liang J, Luo H, Beresford R, Xu J:
Appl. Phys. Lett.. 2004, 85:5974.
COI number [1:CAS:528:DC%2BD2cXhtVKqtr%2FI]
Publisher Full Text -
Song HZ, Usuki T, Hiros S, Takemoto K, Nakata Y, Yokoyama N, Sakuma Y:
Appl. Phys. Lett.. 2005, 86:113118. Publisher Full Text
-
Mei X, Blumin M, Sun M, Kim D, Wu ZH, Ruda HE, Guo QX:
Appl. Phys. Lett.. 2003, 82:967.
COI number [1:CAS:528:DC%2BD3sXhtVGqt78%3D]
Publisher Full Text -
Tersoff J, Teichert C, Lagally MG:
Phys. Rev. Lett.. 1996, 76:1675.
COI number [1:CAS:528:DyaK28XhtlGnt7k%3D]
PubMed Abstract | Publisher Full Text -
Schmidbauer M, Hanke M, Kohler R:
Phys. Rev. B. 2005, 71:115323. Publisher Full Text
-
Songmuang R, Kiravittaya S, Schmidt OG:
Appl. Phys. Lett.. 2003, 82:2892.
COI number [1:CAS:528:DC%2BD3sXjtlSisrw%3D]
Publisher Full Text -
Wang ZM, Holmes K, Yu. Mazur I, Salamo GJ:
Appl. Phys. Lett.. 2003, 84:1931. Publisher Full Text
-
Wang ZhM, Seydmohamadi Sh, Lee JH, Salamo GJ:
Appl. Phys. Lett.. 2004, 85:5031.
COI number [1:CAS:528:DC%2BD2cXhtValtbjJ]
Publisher Full Text -
Heller EJ, Zhang ZY, Lagally MG:
Phys. Rev. Lett.. 1993, 71:743.
COI number [1:CAS:528:DyaK3sXlsVOhsL0%3D]
PubMed Abstract | Publisher Full Text
